3D Silicon Sensor Simulation Simulación de Sensores de Silicio 3D

Project Overview

Role: Lead Developer Duration: 2024-Present Organization: CERN EP-R&D

The Challenge

Optimize 3D columnar silicon sensor geometry for extreme radiation environments (10^16 particles/cm²) targeting the LHCb VELO Upgrade II. Sensors must deliver ~20 ps timing per track while surviving HL-LHC radiation levels.

Technical Approach

  • Developed TCAD simulation framework for electric field modeling of 3D columnar electrode architectures
  • Built Python-based parameter optimization pipeline sweeping cell size, electrode depth, and doping profiles
  • Automated analysis of charge collection efficiency across geometry variants (baseline: CNM 50×50 μm² cells, 280 μm active thickness)
  • Validated simulation predictions against testbeam data from 3 SPS campaigns (180 GeV/c pions at H6/H8 beamlines)
  • Created visualization tools for electric field distributions and weighting potential maps

3D Silicon Sensor cross-section

Technical Stack

Python TCAD NumPy Matplotlib Git Scientific Computing

Current Progress

  • Framework operational and producing results for VELO Upgrade II sensor selection
  • Multiple geometry configurations under evaluation, feeding back into CNM fabrication runs
  • Simulation results cross-checked with EUDAQ telescope measurements (~5 μm pointing resolution at DUT)
  • Collaboration with sensor manufacturers for prototype fabrication

Industry Relevance

Skills directly applicable to:

  • Semiconductor R&D: Sensor development and characterization methodologies
  • Scientific Computing: Large-scale simulation frameworks
  • Optimization: Parameter sweeps and design space exploration
  • Data Visualization: Communicating complex technical results